Nonvolatile memory devices and methods of fabricating the same

Details Nonvolatile memory devices and methods of fabricating the same Nonvolatile memory devices and methods of fabricating the same

2007-02-23

2009-06-16

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000, C257S315000

Reexamination Certificate

active

07547942

ABSTRACT:
A nonvolatile memory device includes a semiconductor substrate including a cell region and a peripheral circuit region, a cell gate on the cell region, and a peripheral circuit gate on the peripheral circuit region, wherein the cell gate includes a charge storage insulating layer on the semiconductor substrate, a gate electrode on the charge storage insulating layer, and a conductive layer on the gate electrode, and the peripheral circuit gate includes a gate insulating layer on the semiconductor substrate, a semiconductor layer on the gate insulating layer, an ohmic layer on the semiconductor layer, and the conductive layer on the ohmic layer.

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