Nonvolatile memory device with multiple blocking layers and...

Details Nonvolatile memory device with multiple blocking layers and... Nonvolatile memory device with multiple blocking layers and...

2011-03-14

2011-10-18

Pham, Hoai V (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000, C257SE21179, C257SE21422

Reexamination Certificate

active

08039337

ABSTRACT:
A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer.

REFERENCES:
patent: 2005/0141286 (2005-06-01), Jung
patent: 2008/0233762 (2008-09-01), Hong
patent: 2009/0280583 (2009-11-01), Hirasawa et al.
patent: 1020010066386 (2001-07-01), None
patent: 1020030002298 (2003-01-01), None
patent: 1020060104717 (2006-10-01), None
Korean Office Action for 10-2008-0040832.

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