Nonvolatile memory device using resistance material

Details Nonvolatile memory device using resistance material Nonvolatile memory device using resistance material

2011-04-12

2011-04-12

Nguyen, Tuan T (Department: 2824)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S148000, C365S225700, C365S230030

Reexamination Certificate

active

07924639

ABSTRACT:
The present invention provides a nonvolatile memory device that uses a resistance material. The nonvolatile memory device includes: a stacked memory cell array having a plurality of memory cell layers stacked in a vertical direction, the stacked memory cell array having at least one memory cell group and at least one redundancy memory cell group; and a repair control circuit coupled to the stacked memory cell array, the repair control circuit configured to repair a defective one of the at least one memory cell group with a selected one of the at least one redundancy memory cell group. The features that enable repair improve the fabrication yield of the nonvolatile memory device.

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