Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2010-09-29
2011-11-01
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S211000, C365S222000
Reexamination Certificate
active
08050084
ABSTRACT:
A nonvolatile memory device includes a memory cell array including a plurality of nonvolatile memory cells each having a resistance corresponding to one of a plurality of first resistance distributions, a temperature compensation circuit including one or more reference cells each having a resistance corresponding to one among one or more second resistance distributions, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit being adapted to supply compensation current to a sensing node, an amount of the compensation current varying based on the resistance of each reference cell, and the sense amplifier being adapted to compare the level of the sensing node with a reference level and to output a comparison result.
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Bae Jun-Soo
Cho Beak-Hyung
Lee Kwang-Jin
Lee & Morse P.C.
Nguyen Hien
Phung Anh
Samsung Electronics Co,. Ltd.
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