Nonvolatile memory device or a single crystal silicon film

Details Nonvolatile memory device or a single crystal silicon film Nonvolatile memory device or a single crystal silicon film

1982-07-29

1987-03-24

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365230, G11C 1140

Patent

active

046530266

ABSTRACT:
A nonvolatile memory device comprising a plurality of memory cells composed of insulated gate-type field effect semiconductor elements, terminals for applying a writing voltage and a reading voltage to said plurality of memory cells, wirings for connecting in common insulated gate-type field effect transistor elements of said plurality of memory cells, and resistance elements or MISFET's which are connected between the wirings and the terminals, wherein said resistance elements or MISFET's are composed of a polycrystalline silicon film or a single crystal silicon film formed on the field insulation film.

REFERENCES:
patent: 4139785 (1979-02-01), McElroy

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