Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-26
2006-09-26
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S261000
Reexamination Certificate
active
07112842
ABSTRACT:
Provided are a nonvolatile memory device and a method of manufacturing the same. The device includes a semiconductor substrate; a source region and a drain region disposed in the semiconductor substrate and a channel region interposed between the source and drain regions; a first tunnel oxide layer disposed on the channel region near the source region; a second tunnel oxide layer disposed on the channel region near the drain region; a first charge trapping layer disposed on the first tunnel oxide layer; a second charge trapping layer disposed on the second tunnel oxide layer; a blocking oxide layer covering the first and second charge trapping layers; a charge isolation layer interposed between the first and second charge trapping layers; and a gate electrode disposed on the blocking oxide layer.
REFERENCES:
patent: 6413819 (2002-07-01), Zafar et al.
patent: 6870765 (2005-03-01), Fujiwara
patent: 6927136 (2005-08-01), Lung et al.
Chae Hee-soon
Han Tae-hyun
Kim Byung-chul
Kim Chung-woo
Kim Joo-yeon
Buchanan & Ingersoll & Rooney PC
Huynh Andy
Kwang-Youl Seo
Lee Calvin
Samsung Electronics Co,. Ltd.
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