Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-04-26
2011-04-26
Parker, Kenneth A (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257SE29275
Reexamination Certificate
active
07932551
ABSTRACT:
A nonvolatile memory device is provided. In the nonvolatile memory device, a semiconductor substrate of a first conductivity type includes first and second fins. A common bit line electrode connects one end of the first fin to one end of the second fin. Control gate electrodes cover the first and second fins and expand across the top surface of each of the first and second fins. A first string selection gate electrode positioned between the common bit line electrode and the control gate electrodes may cover the first and second fins and expand across the top surface of each of the first and second fins. A second string selection gate electrode positioned between the first string selection gate electrode and the control gate electrodes may cover the first and second fins and expand across the top surface of each of the first and second fins.
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European Search Report dated Dec. 10, 2009.
Byun Sung-jae
Kim Suk-pil
Kim Won-joo
Koo June-mo
Park Yoon-dong
Chen David Z
Harness & Dickey & Pierce P.L.C.
Parker Kenneth A
Samsung Electronics Co,. Ltd.
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