Nonvolatile memory device and method of fabricating the same...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S324000, C257SE29275

Reexamination Certificate

active

07932551

ABSTRACT:
A nonvolatile memory device is provided. In the nonvolatile memory device, a semiconductor substrate of a first conductivity type includes first and second fins. A common bit line electrode connects one end of the first fin to one end of the second fin. Control gate electrodes cover the first and second fins and expand across the top surface of each of the first and second fins. A first string selection gate electrode positioned between the common bit line electrode and the control gate electrodes may cover the first and second fins and expand across the top surface of each of the first and second fins. A second string selection gate electrode positioned between the first string selection gate electrode and the control gate electrodes may cover the first and second fins and expand across the top surface of each of the first and second fins.

REFERENCES:
patent: 6664582 (2003-12-01), Fried et al.
patent: 6787406 (2004-09-01), Hill et al.
patent: 6876042 (2005-04-01), Yu et al.
patent: 2005/0035415 (2005-02-01), Yeo et al.
patent: 2005/0077553 (2005-04-01), Kim et al.
patent: 2005/0226047 (2005-10-01), Hieda et al.
patent: 2005/0242391 (2005-11-01), She et al.
patent: 2005/0266638 (2005-12-01), Cho et al.
patent: 2006/0115978 (2006-06-01), Specht et al.
patent: 2007/0018201 (2007-01-01), Specht et al.
patent: 2007/0018237 (2007-01-01), Kim et al.
patent: 2007/0090443 (2007-04-01), Choi et al.
patent: 2007/0183204 (2007-08-01), Kim et al.
European Search Report dated Dec. 10, 2009.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Nonvolatile memory device and method of fabricating the same... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory device and method of fabricating the same..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device and method of fabricating the same... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2704672

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.