Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2009-09-23
2011-12-27
Tran, Michael (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S203000
Reexamination Certificate
active
08085575
ABSTRACT:
A nonvolatile memory device and a method of driving the same are provided, which adopt an improved write operation. The method of driving a nonvolatile memory device includes providing the nonvolatile memory device including a plurality of memory banks each having a plurality of local bit lines and a plurality of variable resistance memory cells; selectively connecting read global bit lines for reading data with the local bit lines, and firstly discharging the selectively connected local bit lines by turning on local bit line discharge transistors coupled to the read global bit lines; and selectively connecting write global bit lines for writing data with the local bit lines, and secondly discharging the selectively connected local bit lines by turning on global bit line discharge transistors.
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Choi Byung-Gil
Kim Du-Eung
Kim Hye-Jin
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Tran Michael
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