Nonvolatile memory device and method of driving the same

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S203000

Reexamination Certificate

active

08085575

ABSTRACT:
A nonvolatile memory device and a method of driving the same are provided, which adopt an improved write operation. The method of driving a nonvolatile memory device includes providing the nonvolatile memory device including a plurality of memory banks each having a plurality of local bit lines and a plurality of variable resistance memory cells; selectively connecting read global bit lines for reading data with the local bit lines, and firstly discharging the selectively connected local bit lines by turning on local bit line discharge transistors coupled to the read global bit lines; and selectively connecting write global bit lines for writing data with the local bit lines, and secondly discharging the selectively connected local bit lines by turning on global bit line discharge transistors.

REFERENCES:
patent: 6515887 (2003-02-01), Fujimoto
patent: 6711051 (2004-03-01), Poplevine et al.
patent: 6859392 (2005-02-01), Abedifard et al.
patent: 7002848 (2006-02-01), Takase et al.
patent: 7020006 (2006-03-01), Chevallier et al.
patent: 10-2003-0087674 (2003-11-01), None
patent: 10-2005-0027151 (2005-03-01), None

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