Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2005-11-07
2010-10-26
Gurley, Lynne A (Department: 2811)
Static information storage and retrieval
Systems using particular element
Resistive
C257S314000, C257S379000, C257S390000, C257S410000, C257S528000, C257SE21662, C257SE21663, C257SE21665, C257SE21679, C257SE45002, C365S185080, C365S185290, C438S381000, C438S279000, C438S283000, C438S587000
Reexamination Certificate
active
07821809
ABSTRACT:
A nonvolatile memory device including one resistor and one transistor. The resistor may correspond to a resistance layer electrically connected to a first impurity region and a second impurity region of the transistor.
REFERENCES:
patent: 5406509 (1995-04-01), Ovshinsky et al.
patent: 5804484 (1998-09-01), Wen
patent: 5894447 (1999-04-01), Takashima
patent: 6673648 (2004-01-01), Lowrey
patent: 6815744 (2004-11-01), Beck et al.
patent: 6838727 (2005-01-01), Yoo et al.
patent: 6844564 (2005-01-01), Tanaka et al.
patent: 7071485 (2006-07-01), Takaura et al.
patent: 2003/0227052 (2003-12-01), Ono et al.
patent: 2004/0051094 (2004-03-01), Ooishi
patent: 2004/0114438 (2004-06-01), Morimoto
patent: 2004/0121261 (2004-06-01), Ashida et al.
patent: 2004/0174732 (2004-09-01), Morimoto
patent: 2004/0233748 (2004-11-01), Terao et al.
patent: 2004/0234895 (2004-11-01), Lee et al.
patent: 2004/0245557 (2004-12-01), Seo et al.
patent: 2005/0117397 (2005-06-01), Morimoto
patent: 2005/0263829 (2005-12-01), Song et al.
patent: 2006/0109704 (2006-05-01), Seo et al.
patent: 1340213 (2002-03-01), None
patent: 1449058 (2003-10-01), None
patent: 1467847 (2004-01-01), None
patent: 1551240 (2004-12-01), None
patent: 2000-216271 (2000-08-01), None
patent: WO 2004/084306 (2004-09-01), None
Chinese Office Action dated Apr. 18, 2008 with English translation of text.
Chinese Office Action dated Oct. 24, 2008 with English translation.
Chinese Office Action dated Apr. 10, 2009 with English translation.
Chinese Office Action dated Feb. 5, 2010 with English translation for corresponding Chinese Application No. 200510120235.5.
Chinese Office Action dated Jul. 30, 2010 with English translation for corresponding Chinese Application No. 200510120235.5.
Lee Myoung-Jae
Seo David
Seo Sun-Ae
Yoo In-Kyeong
Gurley Lynne A
Harness & Dickey & Pierce P.L.C.
Li Meiya
Samsung Electronics Co,. Ltd.
LandOfFree
Nonvolatile memory device and method including resistor and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Nonvolatile memory device and method including resistor and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory device and method including resistor and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4232208