Nonvolatile memory device and method for fabricating the same

Details Nonvolatile memory device and method for fabricating the same Nonvolatile memory device and method for fabricating the same

2005-12-30

2008-11-25

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C257S314000, C257S315000, C257SE21422, C257SE21680, C257SE21687, C257SE29129, C257SE29300

Reexamination Certificate

active

07456060

ABSTRACT:
A nonvolatile memory device includes a floating gate formed on a tunnel oxide layer that is on a semiconductor substrate. The device also includes a drain region formed in the substrate adjacent to one side of the floating gate, a source region formed adjacent to another side of the floating gate. The source region is apart from the floating gate, and an inter-gate insulating layer formed on a portion of an active region between the source region and the floating gate and on a sidewall of the floating gate directing toward the source region, and on a sidewall of the floating gate directing toward the drain region. The device includes a word line formed over the floating gate and being across the substrate in one direction, and a field oxide layer interposing between the word line and the source region.

REFERENCES:
patent: 4881108 (1989-11-01), Yoshikawa
patent: 2002/0045304 (2002-04-01), Lee

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