Nonvolatile memory device and method for fabricating the same

Details Nonvolatile memory device and method for fabricating the same Nonvolatile memory device and method for fabricating the same

2008-05-13

2008-05-13

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S259000

Reexamination Certificate

active

07371639

ABSTRACT:
A nonvolatile memory device and a method for fabricating the same decreases power consumption and prevents contamination of an insulating layer. The nonvolatile memory devices includes a semiconductor substrate; a tunneling oxide layer formed on a predetermined portion of the semiconductor substrate; a floating gate formed on the tunneling oxide layer, the floating gate having a trench structure; a control gate formed inside the trench structure of the floating gate; and a gate insulating layer disposed between the floating gate and the control gate.

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