Nonvolatile memory device and manufacturing method thereof

Details Nonvolatile memory device and manufacturing method thereof Nonvolatile memory device and manufacturing method thereof

1996-04-17

1999-08-03

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, 257396, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059329203

ABSTRACT:
A nonvolatile memory device and a manufacturing method thereof are provided. The nonvolatile memory device includes memory cells which are formed in a cell array region, peripheral circuit devices which are formed in a peripheral circuit region at the periphery of the cell array region, a field oxide film which is formed between the cell array region and the peripheral circuit region, and a dummy conductive pattern which is formed along and on the field oxide film. Accordingly, damage to the substrate formed between the peripheral circuit region and the cell array region can be reduced, thus a characteristic of insulation between devices can be enhanced.

REFERENCES:
patent: 4326331 (1982-04-01), Guterman
patent: 4910566 (1990-03-01), Ema
patent: 5026657 (1991-06-01), Lee et al.
patent: 5247197 (1993-09-01), Ema
patent: 5698902 (1997-12-01), Uehara et al.

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