Nonvolatile memory device

Details Nonvolatile memory device Nonvolatile memory device

2009-05-08

2011-10-04

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27026, C365S185260

Reexamination Certificate

active

08030698

ABSTRACT:
Provided is a nonvolatile memory device having a three dimensional structure. The nonvolatile memory device includes a plurality of stacked semiconductor layers and a plurality of memory cell transistors which is formed on each of a plurality of semiconductor layers and serially connected. Memory cell transistors disposed on different semiconductor layers are serially connected to include one cell string forming a current path in a plurality of semiconductor layers, a first selection transistor serially connected to one edge portion of the cell string and a second selection transistor serially connected to the other edge portion of the cell string.

REFERENCES:
patent: 2008/0023747 (2008-01-01), Park et al.
patent: 100655439 (2006-12-01), None
patent: 100673019 (2007-01-01), None
patent: 100689842 (2007-02-01), None

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