Nonvolatile memory cells with buried channel transistors

Details Nonvolatile memory cells with buried channel transistors Nonvolatile memory cells with buried channel transistors

2006-09-05

2006-09-05

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S381000

Reexamination Certificate

active

07101757

ABSTRACT:
In a nonvolatile memory cell (110), the select gate transistor is formed as a buried channel transistor to increase the transistor current.

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