Nonvolatile memory cell using microelectromechanical device

Details Nonvolatile memory cell using microelectromechanical device Nonvolatile memory cell using microelectromechanical device

1999-01-04

2000-04-25

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257296, 257347, 257350, 257401, 438 52, H01L 2972

Patent

active

060547456

ABSTRACT:
A nonvolatile memory cell comprises a conductive cantilever beam having a free end in a first charge state, a first FET having a conductive gate in a second charge state and a pull-in electrode adapted to bring the cantilever beam into electrical contact with the gate to effect a charge state change in the gate. A pull-in electrode input is connected to the electrode, a cantilever input is connected to the cantilever, a column select input is connected to the first FET and a row select input is connected to the first FET. The nonvolatile memory cell is selected by signals applied to the row select input and the column select input. The cell also includes a second FET connected between the cantilever beam and the cantilever input for controlling the passage of signals from the cantilever input to the cantilever beam and a third FET connected between the pull-in electrode and the pull-in electrode input for controlling the passage of signals from the pull-in electrode input to the electrode. The second FET and third FET have gates connected to the row select input. The row select input turns on the second FET and the third FET to allow the passage of signals from the pull-in electrode input to the pull-in electrode and from the cantilever input to the cantilever beam when the nonvolatile memory cell is selected.

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"On a Nonvolatile Memory Cell Based on Micro-Electro-Mechanics,"B. Halg, IEEE Proc, Of Microelectromechanical Systems, 1990. p. 172-176.

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