Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-05
2007-06-05
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000
Reexamination Certificate
active
11078562
ABSTRACT:
A nonvolatile memory cell having a floating gate for the storage of charges thereon has a control gate and a separate erase gate. The cell is programmed by hot channel electron injection and is erased by poly to poly Fowler-Nordheim tunneling. A method for making an array of unidirectional cells in a planar substrate, as well as an array of bidirectional cells in a substrate having a trench, is disclosed. An array of such cells and a method of making such an array is also disclosed.
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Chen Bomy
Frayer Jack E.
Klinger Pavel
Lee Dana
Levi Amitay
DLA Piper (US) LLP
Nguyen Cuong
Silicon Storage Technology, Inc.
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