Nonvolatile memory cell formed using self aligned source implant

Details Nonvolatile memory cell formed using self aligned source implant Nonvolatile memory cell formed using self aligned source implant

1995-06-07

1997-08-12

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438263, H01L 218247

Patent

active

056565135

ABSTRACT:
A memory device, such as a flash EEPROM, employs a high energy implantation to form common source line, avoiding the necessity of self-aligned source etch processes. The use of the high energy implantation, and avoiding the etching process, provides for greater cell uniformity, and better V.sub.T distribution.

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