Nonvolatile memory cell and method of fabricating the same

Details Nonvolatile memory cell and method of fabricating the same Nonvolatile memory cell and method of fabricating the same

1997-03-17

1999-07-13

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438594, 438264, H01L 218247

Patent

active

059239760

ABSTRACT:
A nonvolatile memory cell is disclosed including a first conductivity-type substrate, an active region located in a predetermined portion of the first conductivity-type substrate, the active region including a second conductivity-type source and drain and a channel region placed between the source and drain, a floating gate having an inverse T-shape and formed on the surface of the substrate between the source and drain, and a control gate formed on the surface of the floating gate.

REFERENCES:
patent: 4994873 (1991-02-01), Madan
patent: 5089867 (1992-02-01), Lee
patent: 5397725 (1995-03-01), Wolstenholme et al.
patent: 5413949 (1995-05-01), Hong
patent: 5498560 (1996-03-01), Sharma et al.
patent: 5677216 (1997-10-01), Tseng

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