Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2007-03-23
2009-08-11
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S230030, C365S236000
Reexamination Certificate
active
07573754
ABSTRACT:
A nonvolatile memory including a memory cell that stores data in a plurality of pages included in a block according to a voltage applied to a memory cell is provided. The nonvolatile memory includes a block that includes a first page including first data that stores data recorded by a user, and a second page including second data area that stores data recorded by a user, wherein the second page records count-information on states represented by a bit pair in the same position of the first data area and the second data area.
REFERENCES:
patent: 5381379 (1995-01-01), Fukumoto
patent: 6587934 (2003-07-01), Miura et al.
patent: 7076601 (2006-07-01), Miura et al.
patent: 7177184 (2007-02-01), Chen
patent: 2005/0013154 (2005-01-01), Honda et al.
patent: 2003-015929 (2003-01-01), None
patent: 10-2001-0100793 (2001-11-01), None
patent: 10-2002-0074830 (2002-10-01), None
patent: 10-2005-0070672 (2005-07-01), None
patent: 10-2006-0056440 (2006-05-01), None
Kim Jin-kyu
Woo Nam-yoon
Yoo Jae-hyuck
Yoon Song-ho
Nguyen Tuan T.
Samsung Electronics Co,. Ltd.
Sughrue & Mion, PLLC
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