Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

2006-10-24

2006-10-24

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S263000, C438S264000

Reexamination Certificate

active

07125772

ABSTRACT:
A nonvolatile memory cell that is highly scalable includes a cell formed in a triple well. A pair of sources for a pair of cells on adjacent word lines each acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor of one cell operates as a charge injector for the other cell. The charge injector provides carriers for substrate hot carrier injection onto a floating gate.

REFERENCES:
patent: 6088263 (2000-07-01), Liu et al.
patent: 6114724 (2000-09-01), Ratnakumar
patent: 6624026 (2003-09-01), Liu et al.

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