Nonvolatile floating gate memory with improved interploy dielect

Details Nonvolatile floating gate memory with improved interploy dielect Nonvolatile floating gate memory with improved interploy dielect

1996-04-17

1998-07-14

Zarabian, A.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, 257411, H01L 2934

Patent

active

057808910

ABSTRACT:
A floating memory device utilizing a composite oxide/oxynitride or oxide/oxynitride/oxide interpoly dielectric.

REFERENCES:
patent: 4613956 (1986-09-01), Paterson et al.
patent: 4697330 (1987-10-01), Paterson et al.
patent: 4937756 (1990-06-01), Hsu et al.
patent: 5010024 (1991-04-01), Allen et al.
patent: 5063431 (1991-11-01), Ohshima
patent: 5256584 (1993-10-01), Hartmann
P. Burkhardt, "Composite Silicon Dioxide-Silicon Oxynitride Insulating Layer," IBM Tech. Discl. Bull., vol. 13, #1, Jun. 1970, p. 21.

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