Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-30
2005-08-30
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S324000, C257S411000, C438S257000, C438S260000
Reexamination Certificate
active
06936884
ABSTRACT:
A nonvolatile silicon/oxide
itride/silicon
itride/oxide/silicon (SONSNOS) structure memory device includes a first insulating layer and a second insulating layer stacked on a channel of a substrate, a first dielectric layer and a second dielectric layer formed on the first insulating layer and under the second insulating layer, respectively, and a group IV semiconductor layer, silicon quantum dots, or metal quantum dots interposed between the first dielectric layer and the second dielectric layer. The provided SONSNOS structure memory device improves a programming rate and the capacity of the memory.
REFERENCES:
patent: 2002/0063277 (2002-05-01), Ramsbey et al.
Chan, et al., “A True Single-Transistor . . . ” IEEE Electron Device Letters EDL-8(3):93-95 (Mar. 1987).
Chae Hee-soon
Chae Soo-doo
Kim Chung-woo
Kim Ju-hyung
Ryu Won-il
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Tran Long
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