Nondestructive readout-type ferroelectric memory device having t

Details Nondestructive readout-type ferroelectric memory device having t Nondestructive readout-type ferroelectric memory device having t

1994-10-24

1996-02-27

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 257295, G11C 1122

Patent

active

054954380

ABSTRACT:
A first ferroelectric capacitor has a ferroelectric member having a film thickness and an area, and electrodes formed on both major surfaces of the member, respectively. Thus, the first ferroelectric capacitor has a polarization. A second ferroelectric capacitor has a ferroelectric member having a film thickness and an area, and electrodes formed on both major surfaces of the member, respectively. Thus, the second ferroelectric capacitor has a polarization. The first and second ferroelectric capacitors are connected parallel to each other, thereby forming a ferroelectric memory device. Since the ferroelectric memory device uses the synthesized hysteresis characteristics of the two ferroelectric capacitors of different coercive field values, it can use multi-value data, and perform nondestructive readout of data stored in the capacitors.

REFERENCES:
patent: 5060191 (1991-10-01), Nagasaki et al.
patent: 5155573 (1992-10-01), Abe et al.
patent: 5262983 (1993-11-01), Brennan
patent: 5291436 (1994-03-01), Kamisawa

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