Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-08
2011-03-08
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29309
Reexamination Certificate
active
07902591
ABSTRACT:
A non-volatile semiconductor storage device has a plurality of memory strings with a plurality of electrically rewritable memory cells connected in series. Each of the memory strings includes: a memory columnar semiconductor extending in a direction perpendicular to a substrate; a tunnel insulation layer contacting the memory columnar semiconductor; a charge accumulation layer contacting the tunnel insulation layer and accumulating charges; a block insulation layer contacting the charge accumulation layer; and a plurality of memory conductive layers contacting the block insulation layer. The lower portion of the charge accumulation layer is covered by the tunnel insulation layer and the block insulation layer.
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Aochi Hideaki
Fukuzumi Yoshiaki
Katsumata Ryota
Kidoh Masaru
Kito Masaru
Ahmed Selim
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Purvis Sue
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