Non-volatile semiconductor storage apparatus and production ther

Details Non-volatile semiconductor storage apparatus and production ther Non-volatile semiconductor storage apparatus and production ther

1997-07-23

1999-04-06

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438264, 438263, H01L 218247

Patent

active

058917730

ABSTRACT:
The invention provides a non-volatile semiconductor storage apparatus wherein silicon pillars are formed by epitaxial growth thereby to suppress a dispersion in channel length and improve the quality of a gate oxide film. In production, epitaxial silicon pillars are formed by selective epitaxial growth on a p-type silicon substrate, and a gate oxide film is formed over the overall area. Polycrystalline silicon is deposited and etched back to form a first polycrystalline silicon film serving as floating gates. Ion implantation is performed to form drain regions at the tops of the epitaxial silicon pillars and form a source region on the surface of the silicon substrate. A layered insulation film is formed, and polycrystalline silicon is deposited and etched back to form a second polycrystalline silicon film which covers over the side faces of the floating gates and serves as control gates. Bit lines are formed on the drain regions.

REFERENCES:
patent: 5135879 (1992-08-01), Richardson
patent: 5180680 (1993-01-01), Yang
patent: 5379255 (1995-01-01), Shah
patent: 5382540 (1995-01-01), Sharma et al.
patent: 5460988 (1995-10-01), Hong
patent: 5554550 (1996-09-01), Yang
H.B. Pein et al.; "Performance of the 3-D Sidewall Flash EPROM Cell"; IEEE IEDM 93.2.1, 1993, pp. 2.1.1-2.1.4, no month provided.

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