Non-volatile semiconductor memory devices

Details Non-volatile semiconductor memory devices Non-volatile semiconductor memory devices

2007-08-07

2007-08-07

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000

Reexamination Certificate

active

10795537

ABSTRACT:
A non-volatile memory device includes a semiconductor substrate, a tunneling insulating layer, a charge storage layer, a blocking insulating layer, and a gate electrode. The tunneling insulating layer is on the substrate and has a first dielectric constant. The charge storage layer is on the tunneling insulating layer. The blocking insulating layer is on the charge storage layer and has a second dielectric constant which is greater than the first dielectric constant of the tunneling insulting layer. The gate electrode is on the blocking insulating layer, and at least a portion of the gate electrode adjacent to the blocking layer has a higher work-function than polysilicon.

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