Non-volatile semiconductor memory devices

Details Non-volatile semiconductor memory devices Non-volatile semiconductor memory devices

2011-06-28

2011-06-28

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21422

Reexamination Certificate

active

07968931

ABSTRACT:
A non-volatile memory device includes a tunneling insulating layer on a semiconductor substrate, a charge storage layer, a blocking insulating layer, and a gate electrode. The charge storage layer is on the tunnel insulating layer and has a smaller band gap than the tunnel insulating layer and has a greater band gap than the semiconductor substrate. The blocking insulating layer is on the charge storage layer and has a greater band gap than the charge storage layer and has a smaller band gap than the tunnel insulating layer. The gate electrode is on the blocking insulating layer.

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English language translation, Office Action, German Patent Application No. 102 28 768.6-33, Sep. 14, 2009.
Wong et al., “Preparation of Thin Dielectric Film for Nonvolatile Memory by Thermal Oxidation of Si-Rich LPCVD Nitride”Journal of the Electrochemical Society148(5):G272-G278 (2001).

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