Non-volatile semiconductor memory device having an improved writ

Details Non-volatile semiconductor memory device having an improved writ Non-volatile semiconductor memory device having an improved writ

1985-12-30

1987-12-01

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365185, G11C 700

Patent

active

047109009

ABSTRACT:
A non-volatile semiconductor device having an improved write voltage application circuit, of the type having a plurality of non-volatile memory elements each coupled to a row line and a column line, and a write voltage application circuit provided for each row line for operatively applying a regulated amount of a write current to the row line in a write state. The write voltage application circuit includes a P-channel MIS transistor which is adapted to take a conductive state of a large resistance at least in a write state, for regulating the amount of the write current.

REFERENCES:
patent: 4565932 (1986-01-01), Kuo et al.
patent: 4583205 (1986-04-01), Watanabe

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