Non-volatile semiconductor memory device and method of...

Details Non-volatile semiconductor memory device and method of... Non-volatile semiconductor memory device and method of...

2007-11-20

2007-11-20

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S326000

Reexamination Certificate

active

11083930

ABSTRACT:
A non-volatile semiconductor memory device includes a semiconductor substrate, a memory cell array formed on the semiconductor substrate, and including a first gate insulator having a first thickness. The device further includes a high-voltage transistor circuit formed on the semiconductor substrate, and including a second gate insulator having a second thickness greater than the first thickness, and a peripheral circuit formed on the semiconductor substrate, and including the second gate insulator.

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patent: 2002-64157 (2002-02-01), None

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