Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-28
2006-03-28
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S258000
Reexamination Certificate
active
07018890
ABSTRACT:
The non-volatile semiconductor memory device has a booster including a capacitor, and a storage circuit including a storage element. The capacitor has a lower electrode, a capacitor capacitance insulating film and an upper electrode. The lower electrode of the capacitor is shaped to have an increased surface area.
REFERENCES:
patent: 6214665 (2001-04-01), Sakui
patent: 6677196 (2004-01-01), Ishige
patent: 6780715 (2004-08-01), Jeong
patent: 2001/0054736 (2001-12-01), Ishige
patent: 2001-60675 (2001-03-01), None
Booth Richard A.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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