Non-volatile semiconductor memory device and manufacturing...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S258000

Reexamination Certificate

active

07018890

ABSTRACT:
The non-volatile semiconductor memory device has a booster including a capacitor, and a storage circuit including a storage element. The capacitor has a lower electrode, a capacitor capacitance insulating film and an upper electrode. The lower electrode of the capacitor is shaped to have an increased surface area.

REFERENCES:
patent: 6214665 (2001-04-01), Sakui
patent: 6677196 (2004-01-01), Ishige
patent: 6780715 (2004-08-01), Jeong
patent: 2001/0054736 (2001-12-01), Ishige
patent: 2001-60675 (2001-03-01), None

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