Non-volatile semiconductor memory device and manufacturing...

Details Non-volatile semiconductor memory device and manufacturing... Non-volatile semiconductor memory device and manufacturing...

2005-07-12

2005-07-12

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S591000, C257S325000

Reexamination Certificate

active

06916709

ABSTRACT:
A non-volatile semiconductor memory device comprising: a first insulating film provided on a silicon based substrate; a first electrode provided on the first insulating film as a floating gate; a second insulating film provided on the first electrode; and a second electrode formed as a control gate on the first electrode through the second insulating film, wherein the first insulating film is formed of at least two layers of: a lower silicon nitride film obtained by nitriding the silicon based substrate; and an upper silicon nitride film or upper silicon oxide film formed on the lower silicon nitride film according to a chemical vapor deposition method, and the lower silicon nitride film contains rare gas elements at an area density of 1010cm−2or more in at least a part of the lower silicon nitride film.

REFERENCES:
patent: 5238863 (1993-08-01), Fukusho et al.
patent: 5780115 (1998-07-01), Park et al.
patent: 2001-160555 (2001-06-01), None

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