Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent
1998-05-19
2000-04-04
Phan, Trong
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
365154, 365156, G11C 700, G11C 1100
Patent
active
060469412
ABSTRACT:
A semiconductor memory device of the present invention has a write circuit and bit line coupled to the write circuit. Output from the write circuit is sent to corresponding bit line by a transfer gate. During data write term, a write voltage is applied to the bit line when writing a "0" and zero volts is applied to the bit line when writing a "1". The bit line therefore is not left in a floating state when writing either a "0" or a "1". A rise in voltage potential of a bit line due to noise is prevented from occurring, thereby eliminating data writing errors.
REFERENCES:
patent: 4980859 (1990-12-01), Guterman et al.
patent: 5204839 (1993-04-01), Lee et al.
patent: 5313420 (1994-05-01), Masuoka
patent: 5353251 (1994-10-01), Uratani et al.
patent: 5452251 (1995-09-01), Akaogi
patent: 5521864 (1996-05-01), Kobayashi et al.
patent: 5703820 (1997-12-01), Kohno
patent: 5768208 (1998-06-01), Bruwer et al.
patent: 5818761 (1998-10-01), Onakado et al.
patent: 5877979 (1999-03-01), Li et al.
NEC Corporation
Phan Trong
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