Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital data error correction
Reexamination Certificate
2007-10-23
2011-12-13
Ton, David (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Digital data error correction
C365S185240
Reexamination Certificate
active
08078940
ABSTRACT:
A non-volatile semiconductor memory device comprises a memory cell array including a plurality of memory cells arrayed capable of storing information in accordance with variations in threshold voltage. A likelihood calculator has a plurality of likelihood calculation algorithms for deriving a likelihood value about a stored data bit from a threshold value read out of the memory cell. An error correction unit executes error correction through iterative processing using the likelihood value obtained at the likelihood calculator. A likelihood calculator controller changes among the likelihood calculation algorithms in the likelihood calculator based on a certain value of the number of iterations in the iterative processing obtained from the error correction unit.
REFERENCES:
patent: 5657332 (1997-08-01), Auclair et al.
patent: 6963505 (2005-11-01), Cohen
patent: 6992932 (2006-01-01), Cohen
patent: 7242618 (2007-07-01), Shappir et al.
patent: 7257025 (2007-08-01), Maayan et al.
patent: 7535765 (2009-05-01), Maayan
patent: 2005/0013165 (2005-01-01), Ban
patent: 2007/0070696 (2007-03-01), Avraham et al.
U.S. Appl. No. 12/796,211, filed Jun. 8, 2010, Sukurada, et al.
U.S. Appl. No. 11/839,222, filed Aug. 15, 2007, Tatsuyuki Ishikawa, et al.
U.S. Appl. No. 11/772,563, filed Jul. 2, 2007, Mitsuaki Honma, et al.
U.S. Appl. No. 11/860,015, filed Sep. 24, 2007, Uchikawa, et al.
U.S. Appl. No. 12/622,868, filed Nov. 20, 2009, Sakurada.
Honma Mitsuaki
Ishikawa Tatsuyuki
Uchikawa Hironori
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Ton David
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