Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-03
2007-04-03
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S239000
Reexamination Certificate
active
11120118
ABSTRACT:
Methods of fabricating memory devices having non-volatile and volatile memory are provided. A substrate is provided, wherein the substrate has a non-volatile memory region and a volatile memory region. The non-volatile memory region has a storage device, such as a split-gate transistor, that is fabricated in substantially the same process steps as a storage capacitor of the volatile memory region. The reduction of process steps allow mixed memory to be fabricated in a cost effective manner.
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Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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