Non-volatile memory generating different read voltages

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

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C365S185180

Reexamination Certificate

active

07974139

ABSTRACT:
In one aspect, a non-volatile memory is provided which includes a plurality of m-bit non-volatile memory cells and a plurality of n-bit non-volatile memory cells, where 1≦m<n, and a voltage generator which generates a first read voltage applied to non-selected m-bit non-volatile memory cells and a second read voltage applied to non-selected n-bit non-volatile memory cells, wherein the first read voltage is less than the second read voltage.

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patent: 2006/0215450 (2006-09-01), Honma et al.
patent: 2007/0047299 (2007-03-01), Bovino et al.
patent: 2005-115982 (2005-04-01), None
patent: 1020050098838 (2005-10-01), None
patent: 1020070011470 (2007-01-01), None
patent: 1020070024702 (2007-02-01), None

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