Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2011-07-05
2011-07-05
Dinh, Son T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S185180
Reexamination Certificate
active
07974139
ABSTRACT:
In one aspect, a non-volatile memory is provided which includes a plurality of m-bit non-volatile memory cells and a plurality of n-bit non-volatile memory cells, where 1≦m<n, and a voltage generator which generates a first read voltage applied to non-selected m-bit non-volatile memory cells and a second read voltage applied to non-selected n-bit non-volatile memory cells, wherein the first read voltage is less than the second read voltage.
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Choi Young-joon
Kim Soon-Young
Dinh Son T
Nguyen Nam T
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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