Non-volatile memory devices, method of manufacturing and...

Details Non-volatile memory devices, method of manufacturing and... Non-volatile memory devices, method of manufacturing and...

2011-01-11

2011-01-11

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S163000, C257SE21350, C438S135000

Reexamination Certificate

active

07869255

ABSTRACT:
A non-volatile memory device includes a substrate having a recess thereon, a resistant material layer pattern in the recess, a lower electrode on the resistant material layer pattern in the recess, a dielectric layer, and an upper electrode formed on the dielectric layer. The resistant material layer pattern includes a material whose resistance varies according to an applied voltage. The dielectric layer is formed on the substrate, the resistant material layer pattern and the lower electrode. An upper electrode overlaps the resistant material layer pattern and the lower electrode. The applied voltage is applied to access the upper and lower electrodes to vary the resistance of the resistant material layer pattern.

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