Non-volatile memory devices including stacked NAND-type...

Details Non-volatile memory devices including stacked NAND-type... Non-volatile memory devices including stacked NAND-type...

2010-11-01

2011-10-11

Pham, Ly D (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S185170, C365S063000

Reexamination Certificate

active

08036018

ABSTRACT:
A non-volatile memory device includes a substrate, an insulating layer on the substrate, and a plurality of serially connected resistive memory cells stacked in the insulating layer such that a first one of the plurality of resistive memory cells is on the substrate and a next one of the plurality of resistive memory cells is on the first one of the plurality of resistive memory cells to define a NAND-type resistive memory cell string. A bit line on the insulating layer is electrically connected to a last one of the plurality of resistive memory cells. At least one of the plurality of resistive memory cells may include a switching device and a data storage element including a variable resistor connected in parallel with the switching device. Related devices and fabrication methods are also discussed.

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patent: 2003/0026121 (2003-02-01), Johnson et al.
patent: 2004/0174732 (2004-09-01), Morimoto
patent: 2008/0112211 (2008-05-01), Toda
patent: 2005-260014 (2005-09-01), None
patent: 1020030055390 (2003-07-01), None
patent: 1020040079328 (2004-09-01), None

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