Non-volatile memory devices having improved operational...

Details Non-volatile memory devices having improved operational... Non-volatile memory devices having improved operational...

2011-08-02

2011-08-02

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000

Reexamination Certificate

active

07989869

ABSTRACT:
Nonvolatile memory devices are provided. Devices include active regions that may be defined by device isolation layers formed on a semiconductor substrate and extend in a first direction. Devices may also include word lines that may cross over the active regions and extend in a second direction intersecting the first direction. The active regions have a first pitch and the word lines have a second pitch that is greater than the first pitch.

REFERENCES:
patent: 6673674 (2004-01-01), Inoue et al.
patent: 2003/0205751 (2003-11-01), Kimura et al.
patent: 2004/0061145 (2004-04-01), Lee et al.
patent: 2004/0165443 (2004-08-01), Harari
patent: 2005/0063215 (2005-03-01), Yang
patent: 2005/0223182 (2005-10-01), Zhang
patent: 2006/0018181 (2006-01-01), Matsunaga et al.
patent: 02-110981 (1990-04-01), None
patent: 1999-006718 (1999-01-01), None
patent: 100190021 (1999-01-01), None
patent: 1020030092861 (2003-12-01), None
patent: 1020040084225 (2004-10-01), None
R. Jacob Baker, Excerpt from Chapter 16 Memory Circuits, CMOS Circuit Design, Layout and Simulation, p. 443-444.

Affiliated with

Also associated with

Rating

Non-volatile memory devices having improved operational... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory devices having improved operational..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory devices having improved operational... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2684950