Non-volatile memory devices and methods of forming the same

Details Non-volatile memory devices and methods of forming the same Non-volatile memory devices and methods of forming the same

2005-10-07

2008-12-09

Estrada, Michelle (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257S324000, C257S627000, C257SE21684, C257SE29129, C257SE29302

Reexamination Certificate

active

07462904

ABSTRACT:
A non-volatile memory device includes an upwardly protruding fin disposed on a substrate and a control gate electrode crossing the fin. A floating gate is interposed between the control gate electrode and the fin and includes a first storage gate and a second storage gate. The first storage gate is disposed on a sidewall of the fin, and the second storage gate is disposed on a top surface of the fin and is connected to the first storage gate. A first insulation layer is interposed between the first storage gate and the sidewall of the fin, and a second insulation layer is interposed between the second storage gate and the top surface of the fin. The second insulation layer is thinner than the first insulation layer. A blocking insulation pattern is interposed between the control gate electrode and the floating gate.

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English Abstract.

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