Non-volatile memory devices

Details Non-volatile memory devices Non-volatile memory devices

2011-07-05

2011-07-05

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21680, C257SE29129, C257S314000, C257S315000, C257S316000, C438S266000, C438S267000, C438S268000

Reexamination Certificate

active

07973357

ABSTRACT:
Non-volatile memory devices are provided including a control gate electrode on a substrate; a charge storage insulation layer between the control gate electrode and the substrate; a tunnel insulation layer between the charge storage insulation layer and the substrate; a blocking insulation layer between the charge storage insulation layer and the control gate electrode; and a material layer between the tunnel insulation layer and the blocking insulation layer, the material layer having an energy level constituting a bottom of a potential well.

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