Non-volatile memory device with a sense amplifier capable of cop

Details Non-volatile memory device with a sense amplifier capable of cop Non-volatile memory device with a sense amplifier capable of cop

1997-11-06

2000-06-13

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Precharge

36518524, G11C 1300

Patent

active

RE036732&

ABSTRACT:
Disclosed is a non-volatile semiconductor memory device for transferring data which is inverted data of held data onto bit lines, without reading out read data to an external unit, when data is copied back. This device comprises NAND memory cells connected to bit lines, a flip-flop circuit for temporarily holding write data, a P channel transistor for precharging the bit lines to a predetermined potential, an N channel transistor for connecting the bit lines to the flip-flop circuit, and an N channel transistor having both ends connected between a node of the flip-flop circuit on the opposite side to the bit lines and one end of the transistor on the bit line side. The transistor is provided to hold read data and then output a potential according to its inverted data onto the bit lines. The individual terminals of the flip-flop circuit are connected via a column gate to an I/O line and a BI/O line (inverted-signal line of I/O).

REFERENCES:
patent: 5383158 (1995-01-01), Ikegami

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