Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2007-11-28
2009-10-13
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C257S004000, C257SE45003, C438S104000
Reexamination Certificate
active
07602633
ABSTRACT:
A non-volatile memory device includes a substrate, resistance patterns, a gate dielectric layer, a gate electrode pattern, a first impurity region and a second impurity region. The substrate has recesses. The recesses are filled with the resistance patterns. The resistance patterns include a material having a resistance that is variable in accordance with a voltage applied thereto. The gate dielectric layer is formed on the substrate. The gate electrode pattern is formed on the gate dielectric layer. The first and second impurity regions are formed in the substrate. The first impurity region and the second impurity region contact side surfaces of the resistance patterns. Further, the resistance patterns, the first impurity region and the second impurity region define a channel region. Thus, the non-volatile memory device may store data using a variable resistance of the resistance patterns so that the non-volatile memory device may have excellent operational characteristics.
REFERENCES:
patent: 7016222 (2006-03-01), Morikawa
patent: 7057922 (2006-06-01), Fukumoto
patent: 7098496 (2006-08-01), Li et al.
patent: 7254050 (2007-08-01), King
patent: 7426128 (2008-09-01), Scheuerlein
patent: 2002-170374 (2002-06-01), None
English language abstract of Japanese Publication No. 2002-170374.
Choi Byung-Yong
Lee Choong-Ho
Park Kyu-Charn
Le Toan
Luu Pho M
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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