Non-volatile memory device having improved programming and...

Details Non-volatile memory device having improved programming and... Non-volatile memory device having improved programming and...

2005-01-18

2005-01-18

Ho, Hoai (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257S315000, C438S266000

Reexamination Certificate

active

06844587

ABSTRACT:
A non-volatile memory device and a fabrication method thereof, wherein a charge trapping layer, which is a memory unit, is formed at opposite ends of a gate of a cell, i.e., adjacent to source and drain junction regions, such that portions of the charge trapping layer adjacent to the source and drain junction regions are formed to be thicker than other portions of the charge trapping layer. Therefore, regions adjacent to junction regions function as electron storage regions and hole filing regions.

REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 6093945 (2000-07-01), Yang
patent: 6335554 (2002-01-01), Yoshikawa
patent: 2001-156188 (2001-06-01), None
patent: 2001-230332 (2001-08-01), None

Affiliated with

Also associated with

Rating

Non-volatile memory device having improved programming and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory device having improved programming and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device having improved programming and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3409549