Non-volatile memory device having dummy pattern

Details Non-volatile memory device having dummy pattern Non-volatile memory device having dummy pattern

2005-02-08

2005-02-08

Elms, Richard (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S288000, C438S257000, C438S264000

Reexamination Certificate

active

06853028

ABSTRACT:
A non-volatile memory device includes a cell region and a peripheral circuit region at the semiconductor substrate. A plurality active regions are disposed in the cell region in parallel with each other. A plurality of cell line patterns cross over the active regions in parallel. A couple of tunnel insulating layers and the floating gate electrodes are disposed between the cell line patterns and the active regions. A dummy region is interposed between the cell region and the peripheral circuit region where at least one dummy line pattern is disposed in the dummy region.

REFERENCES:
patent: 6621117 (2003-09-01), Araki et al.
patent: 20040027861 (2004-02-01), Ryu et al.

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