Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-11
2010-12-07
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S390000, C257S319000, C257SE21626, C257SE29152, C438S257000, C438S197000
Reexamination Certificate
active
07847335
ABSTRACT:
A non-volatile semiconductor memory device includes a gate stack formed on a substrate, semiconductor spacers, an oxide-nitride-oxide stack, and a contact pad. The semiconductor spacers are adjacent to sides of the gate stack and over the substrate. The oxide-nitride-oxide stack is located between the spacers and the gate stack, and located between the spacers and the substrate, such that the oxide-nitride-oxide stack has a generally L-shaped cross-section on at least one side of the gate stack. The contact pad is over and in electrical contact with the gate electrode and the semiconductor spacers. The contact pad may be further formed into recessed portions of the oxide-nitride-oxide stack between the gate electrode and the semiconductor spacers. The contact pad may include an epitaxial silicon having a metal silicide formed thereon.
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Hwang Jiunn-Ren
Lee Tsung-Lin
Lee Tzyh-Cheang
Chen David Z
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
Warren Matthew E
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