Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-01
2008-07-01
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S322000, C257S323000, C257S324000, C257S298000, C257SE21679
Reexamination Certificate
active
11047764
ABSTRACT:
A non-volatile memory device includes a pair of source/drain regions disposed in a semiconductor substrate, having a channel region between them. A charge storage oxide layer is disposed on the channel region and overlaps part of each of the pair of source/drain regions. A gate electrode is disposed on the charge storage oxide layer. At least one halo implantation region is formed in the semiconductor substrate adjacent to one of the pair of source/drain regions, and overlapping the charge storage oxide layer. A program operation is performed by trapping electrons in the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed, and an erase operation is performed by injecting holes into the charge storage oxide layer located near the source/drain region where the halo ion implantation region is formed.
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T. Y. Chan, et al. A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device, Mar. 1987, IEEE Electron Device Letters., vol. 8, No. 3, pp. 93-95.
Bae Geum-Jong
Kim Ki-Chul
Kim Sang-Su
Lee Byoung-jin
Lee & Morse P.C.
Pert Evan
Samsung Electronics Co,. Ltd.
Tran Tan
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