Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-02-19
2010-11-09
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21422
Reexamination Certificate
active
07829929
ABSTRACT:
A non-volatile memory device has improved operating characteristics. The non-volatile memory device includes an active region; a wordline formed on the active region to cross the active region; and a charge trapping layer interposed between the active region and the wordline, wherein a cross region of the active region and the wordline includes an overlap region in which the charge trapping layer is disposed and a non-overlap region in which the charge trapping layer is not disposed.
REFERENCES:
patent: 5969384 (1999-10-01), Hong
patent: 6335554 (2002-01-01), Yoshikawa
patent: 6756271 (2004-06-01), Satoh et al.
patent: 6791140 (2004-09-01), Prall
patent: 6794711 (2004-09-01), Kang et al.
patent: 6806517 (2004-10-01), Kim et al.
patent: 7049651 (2006-05-01), Mikolajick et al.
patent: 2002/0081806 (2002-06-01), Shin et al.
patent: 2003/0198086 (2003-10-01), Shukuri
patent: 2004/0021172 (2004-02-01), Zheng et al.
patent: 2004/0183106 (2004-09-01), Kim et al.
patent: 2005/0037577 (2005-02-01), Kim et al.
patent: 2005/0156227 (2005-07-01), Jeng
patent: 2006/0076609 (2006-04-01), Chindalore et al.
patent: 2006/0086970 (2006-04-01), Kim
patent: 2006/0170032 (2006-08-01), Bhattacharyya
patent: 2006/0205148 (2006-09-01), Deppe et al.
patent: 1531107 (2004-09-01), None
patent: 2000-022008 (2000-01-01), None
patent: 1020060019299 (2006-03-01), None
patent: 1020060035551 (2006-04-01), None
Eli Lusky, et al., Characterization of Channel Hot Electorn Injection by the Subthreshold Slope of NROM Device; IEEE Electron Device Letters, vol. 22, No. 11, Nov. 2001.
Kang Chang-Seok
Kim Ki-Nam
Budd Paul A
Jackson, Jr. Jerome
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
LandOfFree
Non-volatile memory device and non-volatile semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile memory device and non-volatile semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device and non-volatile semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4246702