Non-volatile memory device and non-volatile semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE21422

Reexamination Certificate

active

07829929

ABSTRACT:
A non-volatile memory device has improved operating characteristics. The non-volatile memory device includes an active region; a wordline formed on the active region to cross the active region; and a charge trapping layer interposed between the active region and the wordline, wherein a cross region of the active region and the wordline includes an overlap region in which the charge trapping layer is disposed and a non-overlap region in which the charge trapping layer is not disposed.

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Eli Lusky, et al., Characterization of Channel Hot Electorn Injection by the Subthreshold Slope of NROM Device; IEEE Electron Device Letters, vol. 22, No. 11, Nov. 2001.

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