Non-volatile memory device and methods of manufacturing and...

Details Non-volatile memory device and methods of manufacturing and... Non-volatile memory device and methods of manufacturing and...

2007-01-26

2009-06-09

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C438S259000, C438S264000

Reexamination Certificate

active

07544991

ABSTRACT:
A non-volatile memory device and methods of manufacturing and operating the same are provided. In a method of manufacturing a non-volatile memory device, a substrate having a stepped portion that may include a first horizontal face, a second horizontal face lower than the first horizontal face, and a vertical face connected between the first and second horizontal faces may be prepared. A first impurity region may be formed under the first horizontal face. A tunnel insulation layer may be continuously formed on the vertical face and the second horizontal face. A floating gate electrode having a tip higher than the first horizontal face may be formed on the tunnel insulation layer. A dielectric layer may be formed on the floating gate electrode. The floating gate electrode may be covered with a control gate electrode. A second impurity region horizontally spaced apart from the floating gate electrode may be formed under the second horizontal face.

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