Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-19
2009-02-24
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S319000, C257SE29304
Reexamination Certificate
active
07495281
ABSTRACT:
In a non-volatile memory device and methods of forming and operating the same, one memory transistor includes sidewall selection gates covering both sidewalls of a floating gate when the floating gate and a control gate are stacked. The sidewall selection gates are in a spacer form. Since the sidewall selection gates are in a spacer form on the sidewall of the floating gate, the degree of integration of cells can be improved. Additionally, since the side wall selection gates are disposed on both sidewalls of the floating gate, a voltage applied from a bit line and a common source line can be controlled and thus conventional writing/erasing errors can be prevented. Therefore, distribution of threshold voltage can be improved.
REFERENCES:
patent: 5235544 (1993-08-01), Caywood
patent: 5284784 (1994-02-01), Manley
patent: 5402371 (1995-03-01), Ono
patent: 6222226 (2001-04-01), Lim
patent: 6355524 (2002-03-01), Tuan et al.
patent: 6438028 (2002-08-01), Kobayashi et al.
patent: 6894339 (2005-05-01), Fan et al.
patent: 10-2000-0076924 (2000-12-01), None
patent: 10-2001-0036727 (2001-05-01), None
Han Jeong-Uk
Kim Jae-Hwang
Kim Ju-Ri
Koh Kwang-Wook
Park Sung-Chul
Mills & Onello LLP
Quach Tuan N.
Samsung Electronics Co,. Ltd.
LandOfFree
Non-volatile memory device and methods of forming and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile memory device and methods of forming and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device and methods of forming and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4108558