Static information storage and retrieval – Read/write circuit – Particular read circuit
Reexamination Certificate
2009-08-07
2011-11-01
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Read/write circuit
Particular read circuit
C365S185030, C365S185050
Reexamination Certificate
active
08050115
ABSTRACT:
In one embodiment, the non-volatile memory device includes a plurality of normal memory cells, and at least one flag memory cell associated with one of the plurality of normal memory cells. A normal page buffer is configured to store data read from one of the plurality of normal memory cells. The normal page buffer includes a main latch storing the read data. A control circuit is configured to selectively change data stored in the main latch during a read operation based on a state of the flag memory cell.
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Kang Dong-Ku
Lee Hee-Won
Harness & Dickey & Pierce P.L.C.
Pham Ly D
Samsung Electronics Co,. Ltd.
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